The use of FinFET devices in next-generation high-performance, low-power designs is a fundamental shift that is happening in the semiconductor industry. These devices through their smaller sizes, ...
A technical paper titled “A Comprehensive RF Characterization and Modeling Methodology for the 5nm Technology Node FinFETs” was published by researchers at IIT Kanpur, MaxLinear Inc., and University ...
SAN JOSE, Calif. — Freescale Semiconductor Inc. and the University of Florida claim that they have created the world's first double-gate transistor model. The double-gate transistor is also called ...
Since the inception of the integrated-circuit (IC) industry, design metrics such as performance, power, area, cost, and time-to-market have remained the same. In fact, Moore’s law is all about ...
FinFET technology is seen as the answer to fabrication processes below 20 nm. However, FinFET also presents a lot of uncertainty and concern related to defect manifestation, necessary test methods, ...
AUSTIN, Texas--(BUSINESS WIRE)--The Si2 Compact Model Coalition has released the latest version of BSIM-CMG FinFET, a standard compact SPICE model developed by researchers at the University of ...
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