Purdue University researchers are making progress in developing a new type of transistor that uses a finlike structure instead of the conventional flat design, possibly enabling engineers to create ...

Non-planar Fin Field Effect Transistors (FinFET) are already present in modern devices. The evolution from the well-established 2D planar technology to the design of 3D nanostructures rose new ...

When they were first commercialized at the 22 nm node, finFETs represented a revolutionary change to the way we build transistors, the tiny switches in the “brains” of a chip. As compared to prior ...

The self-assembly of block copolymers (BCPs) can be used to create a versatile range of nanoscale structures 1,2,3, the placement of which can be precisely controlled using lithographically defined ...

At the December 2021 IEDM conference (a conference for people who design advanced semiconductors), IBM announced it was turning transistors on their heads to keep Moore’s Law scaling alive. The new ...

At the recent 2018 IEEE International Electron Devices Meeting (IEDM), TSMC and National Tsing Hua University presented a paper on an ion detector or pH sensor based on a 16nm finFET technology.

How does a nanosheet transistor compare with a FinFET? Issues involved in developing and manufacturing nanosheet transistors. Benefits of adopting nanosheet transistors in chip design. It’s the end of ...

The key electronic component in the integrated circuit (IC) is the planar, bulk metal-oxide semiconductor field-effect transistor (MOSFET). A key driver for the IC industry has been Moore's Law, which ...