Abstract: An ON-chip vacuum transistor based on electron emission from SiOx tunneling diodes formed at the side surface of a thin SiO2 film is proposed, where electrons transport in the vacuum channel ...
Abstract: Time-dependent dielectric breakdown (TDDB) measurement by constant current stress has been performed to investigate the oxide (SiO/sub 2/) reliability grown on n-type 4H-SiC. At 300K, the ...
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